 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTGS3455T1 MOSFET -3.5 Amps, -30 Volts P-Channel TSOP-6 Features * * * * Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available http://onsemi.com V(BR)DSS -30 V RDS(on) TYP 100 mW @ -10 V ID Max -3.5 A Applications * Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance Junction-to-Ambient (Note 1.) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 S) Maximum Operating Power Dissipation Maximum Operating Drain Current Thermal Resistance Junction-to-Ambient (Note 2.) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 S) Maximum Operating Power Dissipation Maximum Operating Drain Current Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds Symbol VDSS VGS RJA Pd ID IDM Pd ID RJA Pd ID IDM Pd ID TJ, Tstg TL Value -30 "20.0 62.5 2.0 -3.5 -20 1.0 -2.5 128 1.0 -2.5 -14 0.5 -1.75 -55 to 150 260 Unit Volts Volts C/W Watts Amps Amps Watts Amps C/W Watts 4 P-Channel 1256 DRAIN 3 GATE 4 SOURCE MARKING DIAGRAM 3 2 1 TSOP-6 CASE 318G STYLE 1 455 x Amps Amps Watts Amps C C 5 6 455 x = Device Code = Date Code PIN ASSIGNMENT Drain Drain Source 6 5 4 1. Mounted onto a 2 square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), t t 5.0 seconds. 2. Mounted onto a 2 square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), operating to steady state. 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3455T1 NTGS3455T1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 1 January, 2004 - Rev. 1 Publication Order Number: NTGS3455T1/D NTGS3455T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Notes 3. & 4.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = -10 A) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -30 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -30 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = -20.0 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +20.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 Adc) Static Drain-Source On-State Resistance (VGS = -10 Vdc, ID = -3.5 Adc) (VGS = -4.5 Vdc, ID = -2.7 Adc) Forward Transconductance (VDS = -15 Vdc, ID = -3.5 Adc) DYNAMIC CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage Diode Forward On-Voltage (IS = -1.7 Adc, VGS = 0 Vdc) (IS = -3.5 Adc, VGS = 0 Vdc) VSD VSD - - -0.90 -1.0 -1.2 - Vdc Vdc (IS = -1.7 Adc, dlS/dt = 100 A/s) (VDD = -20 Vdc, ID = -1.0 Adc, 20 1.0 VGS = -10 Vdc, Rg = 6.0 W) td(on) tr td(off) tf trr - - - - - 10 15 20 10 30 20 30 35 20 - ns ns (VDS = -5.0 Vdc, VGS = 0 Vdc, 5 0 Vd Vd f = 1.0 MHz) (VDS = -15 Vdc, VGS = -10 Vd 15 Vd 10 Vdc, ID = -3.5 Adc) Qtot Qgs Qgd Ciss Coss Crss - - - - - - 9.0 2.5 2.0 480 220 60 13 - - - - - pF nC VGS(th) -1.0 RDS(on) - - gFS - 6.0 - 0.094 0.144 0.100 0.170 mhos -1.87 -3.0 W Vdc V(BR)DSS -30 IDSS - - IGSS - IGSS - - 100 - -100 nAdc - - -1.0 -5.0 nAdc - - Adc Vdc Symbol Min Typ Max Unit 3. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 4. Class 1 ESD rated - Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 NTGS3455T1 20 -ID, DRAIN CURRENT (AMPS) VGS = -10 V VGS = -9 V VGS = -8 V VGS = -7 V VGS = -5 V VGS = -6 V -ID, DRAIN CURRENT (AMPS) 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 TJ = 25C TJ = 125C TJ = -55C 16 12 8 VGS = -4 V 4 TJ = 25C 0 0.5 1 1.5 2 2.5 VGS = -3 V 3 3.5 4 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.3 0.25 0.2 0.15 0.1 0.05 0 ID = -3.5 A TJ = 25C 0.3 TJ = 25C 0.25 0.2 0.15 VGS = -10 V 0.1 0.05 0 VGS = -4.5 V 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.6 ID = -3.5 A VGS = -10 V C, CAPACITANCE (pF) 700 VGS = 0 V TJ = 25C 500 Ciss 300 Coss 100 Crss -100 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) 0 5 10 15 20 25 30 1.4 1.2 1 0.8 0.6 -50 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTGS3455T1 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 -IS, SOURCE CURRENT (AMPS) 11 QT 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 TJ = 25C ID = -3.5 A 10 12 Qgs Qgd 10 10 VGS = 0 V 8 6 TJ = 150C 4 TJ = 25C 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Qg, TOTAL GATE CHARGE (nC) -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5 Figure 8. Diode Forward Voltage vs. Current 0.2 0.1 0.1 0.05 0.02 0.01 0.1 1E-04 1E-03 Single Pulse 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 SQUARE WAVE PULSE DURATION (sec) Figure 9. Normalized Thermal Transient Impedance, Junction-to-Ambient 20 16 POWER (W) 12 8 4 0 0.01 0.10 1.00 TIME (sec) 10.00 100.00 Figure 10. Single Pulse Power http://onsemi.com 4 NTGS3455T1 PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE G A L 6 5 1 2 4 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 DRAIN DRAIN GATE SOURCE DRAIN DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 S B D G M 0.05 (0.002) H C K J STYLE 1: PIN 1. 2. 3. 4. 5. 6. http://onsemi.com 5 NTGS3455T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTGS3455T1/D |
Price & Availability of NTGS3455T1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |